Quantum Gates by Coupled Quantum Dots and Measurement Procedure in Field-effect-transistor Structure

Fortschritte der Physik ◽

10.1002/1521-3978(200009)48:9/11<1005::aid-prop1005>3.0.co;2-b ◽

2000 ◽

Vol 48 (9-11) ◽

pp. 1005-1021 ◽

Author(s):

Tetsufumi Tanamoto

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Measurement Procedure ◽

Quantum Gates ◽

Transistor Structure ◽

Coupled Quantum Dots ◽

Effect Transistor

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Quantum Gates by Coupled Quantum Dots and Measurement Procedure in Field-Effect-Transistor Structure

Scalable Quantum Computers ◽

10.1002/3527603182.ch16 ◽

2005 ◽

pp. 235-251

Author(s):

Tetsufumi Tanamoto

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Measurement Procedure ◽

Quantum Gates ◽

Transistor Structure ◽

Coupled Quantum Dots ◽

Effect Transistor

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State Tomography of Layered Qubits via Spin Blockade Measurements on the Edge Qubit in a Spin Field-Effect Transistor Structure Embedded with Quantum Dots

10.1063/1.2730285 ◽

2007 ◽

Author(s):

K. Yuasa ◽

K. Okano ◽

H. Nakazato ◽

S. Kashiwada ◽

K. Yoh

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

State Tomography ◽

Effect Transistor ◽

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Quantum entanglement formation by repeated spin blockade measurements in a spin field-effect transistor structure embedded with quantum dots

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2005.06.052 ◽

2005 ◽

Vol 29 (3-4) ◽

pp. 674-678 ◽

Author(s):

Kanji Yoh ◽

Kazuya Yuasa ◽

Hiromichi Nakazato

Keyword(s):

Quantum Dots ◽

Quantum Entanglement ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

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Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Journal of Applied Physics ◽

10.1063/1.4936780 ◽

2015 ◽

Vol 118 (21) ◽

pp. 215701 ◽

Author(s):

Alexander Pooth ◽

Michael J. Uren ◽

Markus Cäsar ◽

Trevor Martin ◽

Martin Kuball

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Charge Movement ◽

Substrate Bias ◽

Transistor Structure ◽

Hetero Structure ◽

Carbon Doped ◽

Effect Transistor

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Deterministic chaos oscillator based on a bipolar and field-effect transistor structure with negative resistance

2016 Dynamics of Systems, Mechanisms and Machines (Dynamics) ◽

10.1109/dynamics.2016.7819081 ◽

2016 ◽

Author(s):

Andriy Semenov

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Deterministic Chaos ◽

Negative Resistance ◽

Transistor Structure ◽

Effect Transistor

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Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4812793 ◽

2013 ◽

Vol 31 (4) ◽

pp. 041203 ◽

Author(s):

Yan Zhu ◽

Mantu K. Hudait ◽

Dheeraj K. Mohata ◽

Bijesh Rajamohanan ◽

Suman Datta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

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Gate leakage reduction through the use of a gate-to-source/drain non-overlapped metal–oxide–semiconductor field-effect transistor structure

Proceedings of the Institution of Mechanical Engineers Part N Journal of Nanoengineering and Nanosystems ◽

10.1177/1740349911404304 ◽

2010 ◽

Vol 224 (4) ◽

pp. 173-181 ◽

Author(s):

A K Rana ◽

N Chand ◽

V Kapoor

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage ◽

Transistor Structure ◽

Leakage Reduction ◽

Effect Transistor

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Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

Physica B Condensed Matter ◽

10.1016/s0921-4526(99)00344-0 ◽

1999 ◽

Vol 272 (1-4) ◽

pp. 45-48 ◽

Author(s):

T Tanamoto

Keyword(s):

Quantum Dots ◽

Measurement Procedure ◽

Quantum Gates ◽

Coupled Quantum Dots

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The additive white Gaussian noise impact on the deterministic chaos oscillator based on a field-effect transistor structure with negative resistance

2016 International Conference Radio Electronics & Info Communications (UkrMiCo) ◽

10.1109/ukrmico.2016.7739614 ◽

2016 ◽

Author(s):

Andriy Semenov

Keyword(s):

Gaussian Noise ◽

Field Effect ◽

Field Effect Transistor ◽

Additive White Gaussian Noise ◽

Deterministic Chaos ◽

Negative Resistance ◽

White Gaussian Noise ◽

Transistor Structure ◽

Noise Impact ◽

Effect Transistor

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Modeling of the Heterostructure Field-Effect Transistor with Quantum Dots

2006 16th International Crimean Microwave and Telecommunication Technology ◽

10.1109/crmico.2006.256370 ◽

2006 ◽

Author(s):

V. Timofeyev ◽

E. Faleyeva

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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